Marantz DV4100 User Manual download pdf (Page 121)

IC Descriptions.

GB 65ASD-1 9.

Am29LV160BT/Am29LV160BB

16 Megabit (2 M x 8-Bit/1 M x 16-Bit)

CMOS 3.0 Volt-only Sector Erase Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

— Full voltage range: 2.7 to 3.6 volt read and write

operations for battery-powered applications

— Regulated voltage range: 3.0 to 3.6 volt read

and write operations and for compatibility with

high performance 3.3 volt microprocessors

■ Manufactured on 0.35 µm process technology

■ Supports Common Flash Memory Interface

(CFI)

■ High performance

— Full voltage range: access times as fast as 90 ns

— Regulated voltage range: access times as fast

as 80 ns

■ Ultra low power consumption (typical values at

5 MHz)

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 10 mA read current

— 20 mA program/erase current

■ Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

thirty-one 64 Kbyte sectors (byte mode)

— One 8 Kword, two 4 Kword, one 16 Kword, and

thirty-one 32 Kword sectors (word mode)

— Supports full chip erase

— Sector Protection features:

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

Sectors can be locked in-system or via

programming equipment

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Top or bottom boot block configurations

available

■ Embedded Algorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ Minimum 100,000 write cycle guarantee per

sector

■ Package option

— 48-ball FBGA

— 48-ball µBGA

— 48-pin TSOP

— 44-pin SO

■ Compatibility with JEDEC standards

— Pinout and software compatible with single-

power supply Flash

— Superior inadvertent write protection

■ Data# Polling and toggle bits

— Provides a software method of detecting

program or erase operation completion

■ Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting

program or erase cycle completion (not

available on 44-pin SO)

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data

1 2 ... 116 117 118 119 120 121 122 123 124 125 126 ... 142 143

Comments to this Manuals

No comments